rf01000, rev . c ( 1/4/13 ) ?201 3 microsemi corporation page 1 of 7 msmbg5.0a C m xl smbg170ca e3 , msmbj5.0a C m xl smbj170ca e3 available 600 watt s urface m ount t ransient v oltage s uppressor screening in reference to mil - prf - 19500 available description the m smb 5 .0 a C m smb 170ca series of surface mount 600 watt transient voltage suppressors provide a selection of standoff voltages (vwm) from 5.0 to 170 v. these high - reliability devices are available in either unidirectional or bidirectional versions. the smbg gull - wing design in the do - 215aa package i s ideal for visible solder connections. the smbj j- bend design in the do - 214aa package allows for greater pc board mounting density. it is available with snpb or rohs compliant matte - tin plating. do - 215aa gull - wing package do - 21 4 aa j- bend pac kage note: all smb series are equivalent to prior sms package identifications. also available in : commercial grade smb j 5.0a C smbj 170cae3 t- 18 package ( axial - leaded ) p6ke6.8a C p6ke200ca e3 important: for the latest information, visit our website http://www.microsemi.com . features ? high reliability devices with wafer fabrication and assembly lot traceability . ? all devices 100% surge tested . ? enhanced reliability screening in reference to mil - prf - 19500 is also available. r efer to high reliability up - screened plastic products portfolio for more details on the screening options . (see part nomenclature for all options.) ? moisture classification is level 1 with no dry pack required per ipc/jedec j - std - 020b . ? 3 lot norm screening performed on s tandby c urrent (i d ). ? rohs compliant versions available. applications / benefits ? protects sensitive components such as ics, cmos, b ipolar, bicmos, ecl, dtl, t2l, etc. ? protection from switching transients & rf induced voltage pulses. ? protection from esd and eft per iec 61 0 00 -4- 2 a n d iec 61 000 -4- 4. ? secondary lightning protection per iec61000 -4- 5 with 42 o hms source impedance : class 1: msb 5.0a to msmb 120ca class 2: msmb 5.0a to msmb 60ca class 3: msmb 5.0a to msm b 30ca class 4: msmb 5.0a to msmb 15ca ? secondary lightning protection per iec61000 -4- 5 with 12 o hms source impedance: class 1: msmb 5.0a to msmb 36ca class 2: msmb 5.0a to msmb 18ca m axim um ratings @ 25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction an d storage temperature t j and t stg - 65 to +150 o c thermal resistance, junction to lead r ? jl 25 o c /w thermal resistance, junction to ambient (1) r ? ja 90 o c /w peak pulse power dissipation (2) 10/1000us p pp 600 w rated average power dissipation (1) @ t l < 25 oc @ t a = 25 oc p m(av) 5 1.38 w t clamping (0 volts to v ( br) min) unidirectional bidirectional < 100 < 5 ps ns for w ard surge current (3) i fs 100 a (pk) sold e r temperature @ 10 s t sp 260 o c notes : 1. w hen mounted on fr4 pc board (1oz cu) with recommended footprint (see pad layout on last page) . 2. with impulse repetition rate (duty factor) of 0.01 % or less (also figure 1 and 4 ). 3. peak impulse of 8.3 ms half - sine wave (unidir ectional only). downloaded from: http:///
rf01000, rev . c ( 1/4/13 ) ?201 3 microsemi corporation page 2 of 7 msmbg5.0a C m xl smbg170ca e3 , msmbj5.0a C m xl smbj170ca e3 mechanical and packaging ? case: void - free transfer molded thermosetting epoxy body meeting ul94v -0 requirements . ? terminals: t in -l ea d or rohs co mp li an t an ne a le d ma tte-tin plating r ead ily so l de ra bl e pe r mil- std- 750 , me thod 2 02 6. ? markin g: part number. ? polarity: cathode end banded . ? tape & reel option: standard per eia - 481 -1-a (add tr suffix to part number). consult factory for quantities. ? w eight: a pproximately 0.1 grams . ? see p ackage d imensions on last page. part nomenclature m sm b g 5 .0 c a e3 reliability level * m ma mx mxl * (see high reliability up - screened plastic pr oducts portfolio ) surface mount package 600 w powe r level lead f orm g = gull - wing j = j - bend rohs compliance e3 = rohs compliant blank = non - rohs compliant +/ - 5% tolerance level polarity c = bidirectional blank = unidirectional stand - off voltage (v wm ) (see electrical characteristics table) symbols & definitions symbol definition v wm w or king peak (s t an doff ) v oltage - the maximum peak voltage that can be applied over the operating temperature range. this is also referred to as s tandoff v oltage. p pp p ea k pulse power - rated random recurring peak impulse power dissipation. v ( br) br eak down v ol tage - the minimum voltage the device will exhibit at a specified current . i d st andb y cu rr ent - the current at the rated standoff voltage (v wm ). i pp p ea k pulse cu rr ent - the peak current during the impulse. v c cl am p in g v ol tage - clamping v oltage at i pp (p eak p ulse c urrent) at the specified pulse conditions (typically shown as maximum value). i br br eak down cu rr en t C the current used for measuring breakdown voltage v ( br) . downloaded from: http:///
rf01000, rev . c ( 1/4/13 ) ?201 3 microsemi corporation page 3 of 7 msmbg5.0a C m xl smbg170ca e3 , msmbj5.0a C m xl smbj170ca e3 electrical characteristics @ 25 oc par t num ber reverse stand- off volt a ge v wm br ea kdown vol ta ge v( br ) @ i( br ) maximu m clampi ng volt a ge v c @ i pp pea k pulse current (see fi g. 2 ) i pp maximu m stan dby current i d @ v wm gull - w ing j- bend v v ma v a a msmbg5.0a msmbj5.0a 5 6.40 C 7.00 10 9.2 65.2 800 msmbg6.0a msmbj6.0a 6 6.67 C 7.37 10 10.3 58.3 800 msmbg6.5a msmbj6.5a 6.5 7.22 C 7.98 10 11.2 53.6 500 msmbg7.0a msmbj7.0a 7 7.78 C 8.60 10 12 50 200 msmbg7.5a ms mbj7.5a 7.5 8.33 C 9.21 1 12.9 46.5 100 msmbg8.0a msmbj8.0a 8 8.89 C 9.83 1 13.6 44.1 50 msmbg8.5a msmbj8.5a 8.5 9.44 C 10.4 1 14.4 41.7 10 msmbg9.0a msmbj9.0a 9 10.0 C 11.1 1 15.4 39 5 msmbg10a msmbj10a 10 11.1 C 12.3 1 17 35.3 5 msmbg11a msmbj11a 11 12.2 C 13.5 1 18.2 33 5 msmbg12a msmbj12a 12 13.3 C 14.7 1 19.9 30.2 5 msmbg13a msmbj13a 13 14.4 C 15.9 1 21.5 27.9 1 msmbg14a msmbj14a 14 15.6 C 17.2 1 23.2 25.8 1 msmbg15a msmbj15a 15 16.7 C 18.5 1 24.4 24 1 msmbg16a msmbj16a 16 17.8 C 19.7 1 26 23 .1 1 msmbg17a msmbj17a 17 18.9 C 20.9 1 27.6 21.7 1 msmbg18a msmbj18a 18 20.0 C 22.1 1 29.2 20.5 1 msmbg20a msmbj20a 20 22.2 C 24.5 1 32.4 18.5 1 msmbg22a msmbj22a 22 24.4 C 26.9 1 35.5 16.9 1 msmbg24a msmbj24a 24 26.7 C 29.5 1 38.9 15.4 1 msmbg26a m smbj26a 26 28.9 C 31.9 1 42.1 14.2 1 msmbg28a msmbj28a 28 31.1 C 34.4 1 45.4 13.2 1 msmbg30a msmbj30a 30 33.3 C 36.8 1 48.4 12.4 1 msmbg33a msmbj33a 33 36.7 C 40.6 1 53.3 11.3 1 msmbg36a msmbj36a 36 40.0 C 44.2 1 58.1 10.3 1 msmbg40a msmbj40a 40 44.4 C 49.1 1 64.5 9.3 1 msmbg43a msmbj43a 43 47.8 C 52.8 1 69.4 8.6 1 msmbg45a msmbj45a 45 50.0 C 55.3 1 72.7 8.3 1 msmbg48a msmbj48a 48 53.3 C 58.9 1 77.4 7.7 1 msmbg51a msmbj51a 51 56.7 C 62.7 1 82.4 7.3 1 msmbg54a msmbj54a 54 60.0 C 66.3 1 87.1 6.9 1 msmbg58a msmbj58a 58 64.4 C 71.2 1 93.6 6.4 1 msmbg60a msmbj60a 60 66.7 C 73.7 1 96.8 6.2 1 msmbg64a msmbj64a 64 71.1 C 78.6 1 103 5.8 1 msmbg70a msmbj70a 70 77.8 C 86.0 1 113 5.3 1 msmbg75a msmbj75a 75 83.3 C 92.1 1 121 4.9 1 msmbg78a msmbj78a 78 86.7 C 95.8 1 126 4.7 1 msmbg85a msmbj85a 85 94.4 C 104 1 137 4.4 1 msmbg90a msmbj90a 90 100 C 111 1 146 4.1 1 msmbg100a msmbj100a 100 111 C 123 1 162 3.7 1 msmbg110a msmbj110a 110 122 C 135 1 177 3.4 1 msmbg120a msmbj120a 120 133 C 147 1 193 3.1 1 msmb g130a msmbj130a 130 144 C 159 1 209 2.9 1 msmbg150a msmbj150a 150 167 C 185 1 243 2.5 1 msmbg160a msmbj160a 160 178 C 197 1 259 2.3 1 msmbg170a msmbj170a 170 189 C 209 1 275 2.2 1 downloaded from: http:///
rf01000, rev . c ( 1/4/13 ) ?201 3 microsemi corporation page 4 of 7 msmbg5.0a C m xl smbg170ca e3 , msmbj5.0a C m xl smbj170ca e3 graphs t w C pulse width s figure 1 peak pulse power vs pulse time t C time C ms test waveform parameters: tr=10 s, tp=1000s figure 2 pulse waveform for 10/1000 exponential surge pulse current in percent of i pp p pp - peak pulse power - kw downloaded from: http:///
rf01000, rev . c ( 1/4/13 ) ?201 3 microsemi corporation page 5 of 7 msmbg5.0a C m xl smbg170ca e3 , msmbj5.0a C m xl smbj170ca e3 graphs (continued) t l lead temperature c figure 3 derating curve v (br) - breakdown voltage - volts figure 4 typical capacitance vs. breakd own voltage note: bidirectional capacitance is half that shown at zero volts. peak pulse power (p pp ) or continuous power in percent of 25c rating c C capacitance - picofarads downloaded from: http:///
rf01000, rev . c ( 1/4/13 ) ?201 3 microsemi corporation page 6 of 7 msmbg5.0a C m xl smbg170ca e3 , msmbj5.0a C m xl smbj170ca e3 package dimensions see pad layout on next page. dimensions ltr inch millimeters min max min max a .077 . 083 1.96 2.10 b .160 .180 4.06 4.57 c .130 .155 3.30 3.94 e .077 .104 1.95 2.65 f .235 . 255 5.97 6.48 k .015 .030 .381 .762 dimensions ltr inch millimeters min max min max a .077 . 083 1.96 2.10 b .160 .180 4.06 4.57 c .130 .155 3.30 3.94 d .205 .220 5.21 5.59 e .077 .104 1.95 2.65 l .030 .060 .760 1.52 smbg (do- 21 5aa) sm bj (do - 21 4aa) downloaded from: http:///
rf01000, rev . c ( 1/4/13 ) ?201 3 microsemi corporation page 7 of 7 msmbg5.0a C m xl smbg170ca e3 , msmbj5.0a C m xl smbj170ca e3 pad layout sm b g (do - 215a a) ltr inch millimeters a 0.320 8.13 b 0.085 2.16 c 0.110 2.79 sm bj (do - 214a a) ltr inch millimeters a 0.260 6.60 b 0.085 2.16 c 0.110 2.79 downloaded from: http:///
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